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?2002 fairchild semiconductor corporation may 2002 ISL9R18120G2 / isl9r18120p2 / isl9r18120s3s ISL9R18120G2 / isl9r18120p2 / isl9r18120s3s rev. a ISL9R18120G2 / isl9r18120p2 / isl9r18120s3s 18a, 1200v stealth? diode general description the ISL9R18120G2, isl9r18120p2 and isl9r18120s3s are stealth? diodes optimized for low loss performance in high frequency hard switched applications. the stealth? family exhibits low reverse recovery current (i rm(rec) ) and exceptionally soft recovery under typical operating conditions. this device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. the low i rm(rec) and short t a phase reduce loss in switching transistors. the soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. consider using the stealth? diode with a 1200v npt igbt to provide the most efficient and highest power density design at lower cost. formerly developmental type ta49414 . features soft recovery . . . . . . . . . . . . . . . . . . . . . . . . t b / t a > 5.0 fast recovery . . . . . . . . . . . . . . . . . . . . . . . . . t rr < 45ns operating temperature . . . . . . . . . . . . . . . . . . . . 150 o c reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 1200v avalanche energy rated applications switch mode power supplies hard switched pfc boost diode ups free wheeling diode motor drive fwd smps fwd snubber diode device maximum ratings t c = 25c unless otherwise noted symbol parameter ratings units v rrm repetitive peak reverse voltage 1200 v v rwm working peak reverse voltage 1200 v v r dc blocking voltage 1200 v i f(av) average rectified forward current (t c = 92 o c) 18 a i frm repetitive peak surge current (20khz square wave) 36 a i fsm nonrepetitive peak surge current (halfwave 1 phase 60hz) 200 a p d power dissipation 125 w e avl avalanche energy (1a, 40mh) 20 mj t j , t stg operating and storage temperature range -55 to 150 c t l t pkg maximum temperature for soldering leads at 0.063in (1.6mm) from case for 10s package body for 10s, see application note an-7528 300 260 c c caution: stresses above those listed in ?absolute maximum ratings? may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specificatio n is not implied. k a jedec to-220ac anode cathode jedec to-263ab cathode (flange) n / c 2 lead to-247 anode cathode cathode (bottom side metal) anode cathode (flange) package symbol
?2002 fairchild semiconductor corporation ISL9R18120G2 / isl9r18120p2 / isl9r18120s3s rev. a ISL9R18120G2 / isl9r18120p2 / isl9r18120s3s package marking and ordering information electrical characteristics t c = 25 c unless otherwise noted off state characteristics on state characteristics dynamic characteristics switching characteristics thermal characteristics device marking device package tape width quantity r18120g2 ISL9R18120G2 to-247 n/a 30 r18120p2 isl9r18120p2 to-220ac n/a 50 r18120s3s isl9r18120s3s to-263ab 24mm 800 symbol parameter test conditions min typ max units i r instantaneous reverse current v r = 1200v t c = 25 c - - 100 a t c = 125 c--1.0ma v f instantaneous forward voltage i f = 18a t c = 25 c-2.73.3v t c = 125 c-2.53.1v c j junction capacitance v r = 10v, i f = 0a - 69 - pf t rr reverse recovery time i f = 1a, di f /dt = 100a/s, v r = 30v - 38 45 ns i f = 18a, di f /dt = 100a/s, v r = 30v - 60 70 ns t rr reverse recovery time i f = 18a, di f /dt = 200a/s, v r = 780v, t c = 25 c - 300 - ns i rm(rec) maximum reverse recovery current - 6.5 - a q rr reverse recovered charge - 950 - nc t rr reverse recovery time i f = 18a, di f /dt = 200a/s, v r = 780v, t c = 125 c - 400 - ns s softness factor (t b /t a )-7.0-- i rm(rec) maximum reverse recovery current - 8.0 - a q rr reverse recovered charge - 2.0 - c t rr reverse recovery time i f = 18a, di f /dt = 1000a/s, v r = 780v, t c = 125 c - 235 - ns s softness factor (t b /t a )-5.2-- i rm(rec) maximum reverse recovery current - 22 - a q rr reverse recovered charge - 2.1 - c di m /dt maximum di/dt during t b - 370 - a/s r jc thermal resistance junction to case to-247, to-220, to-263 - - 1.0 c/w r ja thermal resistance junction to ambient to-247 - - 30 c/w r ja thermal resistance junction to ambient to-220, to-263 - - 62 c/w
?2002 fairchild semiconductor corporation ISL9R18120G2 / isl9r18120p2 / isl9r18120s3s rev. a ISL9R18120G2 / isl9r18120p2 / isl9r18120s3s typical performance curves figure 1. forward current vs forward voltage figure 2. reverse current vs reverse voltage figure 3. t a and t b curves vs forward current figure 4. t a and t b curves vs di f /dt figure 5. maximum reverse recovery current vs forward current figure 6. maximum reverse recovery current vs di f /dt 0 5 10 15 20 25 30 0.25 0.75 1.25 1.75 2.25 2.75 3.25 v f , forward voltage (v) i f , forward current (a) 25 o c 150 o c 125 o c 100 o c 0.01 0.1 1 10 100 1000 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.1 v r , reverse voltage (kv) i r , reverse current (a) 25 o c 100 o c 75 o c 150 o c 125 o c 0 100 200 300 400 500 600 0 3 6 9 12 15 18 21 24 27 30 i f , forward current (a) t, recovery times (ns) t a at di f /dt = 200a/s, 500a/s, 800a/s t b at di f /dt = 200a/s, 500a/s, 800a/s v r = 780v, t c = 125 o c 0 100 200 300 400 500 600 200 400 600 800 1000 1200 1400 di f /dt, current rate of change (a/s) t, recovery times (ns) v r = 780v, t c = 125 o c t b at i f = 30a, 15a, 7.5a t a at i f = 30a, 15a, 7.5a 5 10 15 20 25 0 3 6 9 12 15 18 21 24 27 30 i f , forward current (a) i rm(rec) , max reverse recovery current (a) di f /dt = 800a/s di f /dt = 600a/s di f /dt = 200a/s v r = 780v, t c = 125 o c 5 10 15 20 25 200 400 600 800 1000 1200 1400 di f /dt, current rate of change (a/s) i f = 30a i f = 7.5a i rm(rec) , max reverse recovery current (a) i f = 15a v r = 780v, t c = 125 o c
?2002 fairchild semiconductor corporation ISL9R18120G2 / isl9r18120p2 / isl9r18120s3s rev. a ISL9R18120G2 / isl9r18120p2 / isl9r18120s3s figure 7. reverse recovery softness factor vs di f /dt figure 8. reverse recovered charge vs di f /dt figure 9. junction capacitance vs reverse voltage figure 10. reverse recovery current and times vs case temperature figure 11. dc current derating curve typical performance curves (continued) 3 4 5 6 7 8 9 10 200 400 600 800 1000 1200 1400 di f /dt, current rate of change (a/s) v r = 780v, t c = 125 o c i f = 30a i f = 15a i f = 7.5a s, reverse recovery softness factor 800 1200 1600 2000 2400 2800 3200 3600 200 400 600 800 1000 1200 1400 di f /dt, current rate of change (a/s) v r = 780v, t c = 125 o c i f = 30a i f = 15a i f = 7.5a q rr , reverse recovered charge (nc) 0 200 400 600 800 1000 1200 0.1 1 10 100 0.01 v r , reverse voltage (v) c j , junction capacitance (pf) f = 1mh z t c , case temperature ( o c) 25 50 75 100 125 150 t rr , recovery times (ns) i rm(rec) , max reverse recovery current (a) -12.5 -12.0 -11.5 -11.0 -10.5 -10.0 -9.5 -9.0 -8.5 240 260 280 300 320 340 360 380 400 t rr i rm(rec) i f = 18a, v r = 780v, di f /dt = 300a/s 5 0 100 110 130 80 150 120 10 15 20 t c , case temperature ( o c) i f(av) , average forward current (a) 140 90
?2002 fairchild semiconductor corporation ISL9R18120G2 / isl9r18120p2 / isl9r18120s3s rev. a ISL9R18120G2 / isl9r18120p2 / isl9r18120s3s figure 12. normalized maximum transient thermal impedance typical performance curves (continued) t, rectangular pulse duration (s) 10 -5 10 -2 10 -1 z ja , normalized thermal impedance 0.01 10 -4 10 -3 single pulse 10 0 0.1 10 1 duty cycle - descending order 0.5 0.2 0.1 0.05 0.01 0.02 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z ja x r ja + t a p dm t 1 t 2 1.0 test circuit and waveforms figure 13. t rr test circuit figure 14. t rr waveforms and definitions figure 15. avalanche energy test circuit figure 16. avalanche current and voltage waveforms r g l v dd mosfet current sense dut v ge t 1 t 2 v ge amplitude and t 1 and t 2 control i f r g control di f /dt + - dt di f i f t rr t a t b 0 i rm 0.25 i rm dut current sense + lr v dd r < 0.1 ? e avl = 1/2li 2 [v r(avl) /(v r(avl) - v dd )] q 1 = igbt (bv ces > dut v r(avl) ) - v dd q 1 i = 1a l = 40mh v dd = 50v iv t 0 t 1 t 2 i l v av l t i l

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